SIRA12BDP-T1-GE3Vishay Siliconix
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    SIRA12BDP-T1-GE3123
    • Manufacturer No：
      SIRA12BDP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      377199
    • Description：
      MOSFET N-CHAN 30V
    • Quantity：
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    Inventory:9949
    • Qty Unit Price price
    • 1 $0.594 $0.594
    • 10 $0.588 $5.88
    • 100 $0.582 $58.2
    • 1000 $0.576 $576
    • 10000 $0.57 $5700

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    SIRA12BDP-T1-GE3
    • Manufacturer No：
      SIRA12BDP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SIRA12BDP-T1-GE3
    • SKU：
      377199
    • Description：
      MOSFET N-CHAN 30V

    User Guide

    User Guide

    SIRA12BDP-T1-GE3 Details

    MOSFET N-CHAN 30V

    SIRA12BDP-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Tape & Reel (TR)
    • Drain to Source Voltage (Vdss): 30V
    • FET Type: N-Channel
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Supplier Device Package: PowerPAK? SO-8
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
    • Vgs (Max): +20V, -16V
    • Current - Continuous Drain (Id) @ 25°C: 27A Ta 60A Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Factory Lead Time: 14 Weeks
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Package / Case: PowerPAK? SO-8
    • Vgs(th) (Max) @ Id: 2.4V @ 250μA
    • Series: TrenchFET? Gen IV
    • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 15V
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